Photo Detector IC for Optoelectronic Switch
Photo Detector IC for Optoelectronic Switch
A photodetector IC for optoelectronic switches with all optoelectronic switch functions built in (all functions integrated, model MSP00101). It integrates every function required of optoelectronic switches for factory automation, achieving 5X the speed and more than double the S/N of other companies' products.
Because the proprietary light-receiving surface shield is built in, no external electromagnetic shield is required. The emission pulse width is 0.5μsec, halving power consumption.
Features
- All optoelectronic switch functions built in (LED driver included)
- Proprietary built-in light-receiving surface shield eliminates the need for an external electromagnetic shield
- Emission pulse width 0.5μsec, halving power consumption
- Two-segment light-receiving surface (0.7mm×0.7mm×2)
- 5X the speed and more than double the S/N of other companies' products
Specifications
Technical Data
Photo Detector IC for Optoelectronic Switch (all functions built in)
| Item | Specification |
|---|---|
| Model | MSP00101 |
| Built-in functions | All optoelectronic switch functions built in (LED driver included) |
| Emission pulse width | 0.5μsec (halves power consumption) |
| Light-receiving surface | Two-segment light-receiving surface (0.7mm×0.7mm×2) |
| Shield | Built-in light-receiving surface shield (no external electromagnetic shield required) |
MSP00101 Electrical and Optical Characteristics (Ta=25°C)
| Item | Symbol | MIN | TYP | MAX | Unit |
|---|---|---|---|---|---|
| Peak sensitivity wavelength | λp | 830 | nm | ||
| Supply voltage | Vcc | 4.75 | 5 | 5.25 | V |
| Current consumption | Ic | 1.6 | 2 | mA | |
| Output current | Lout | 4 | mA | ||
| Pulse interval | Tpd | 38 | 45 | 55 | μsec |
| Pulse width | Tpw | 0.5 | μsec | ||
| Center frequency of photodetection | fp | 1 | MHz |
General-Purpose Analog Photo IC
A general-purpose analog photo IC that achieves low capacitance and low noise through our proprietary photodetector element. It adopts our proprietary shield structure, which is unaffected by external electromagnetic noise, and its built-in coupling capacitor for DC cutting removes ambient light near DC.
| Item | Specification |
|---|---|
| Frequency | 1MHz |
| Linearity | High linearity |
| Noise | Low noise: noise equivalent power level -78dBm (15pW TYP) |
| Light-receiving surface size | 0.7mm×0.7mm |
| Built-in circuit | Coupling capacitor for DC cutting (removes ambient light near DC) |
| Noise immunity | Resistant to external electromagnetic noise (proprietary shield structure) |
Electrical and Optical Characteristics (preliminary)
| Item | Symbol | MIN | TYP | MAX | Unit | Remarks |
|---|---|---|---|---|---|---|
| Supply voltage | Vcc | 4.5 | 5.5 | V | ||
| Current consumption | Icc | 0.7 | 1 | 1.4 | mA | |
| Sensitivity wavelength range | λ | 400 to 1050 | nm | |||
| Peak sensitivity wavelength | λmax | 820 | nm | |||
| Photosensitivity | A | 85 | 100 | 120 | V/(mW/mm²) | Signal frequency = 100kHz |
| AC light sensitivity linearity | Alin | 10 | μW/mm² | Output ±10% compression | ||
| 25 | μW/mm² | Output ±50% compression | ||||
| Low cutoff frequency | fcL | 30 | 40 | 55 | kHz | 3dB down |
| High cutoff frequency | fcH | 1100 | 1200 | 1400 | kHz | 3dB down |
| Allowable ambient light illuminance | Pdc | TBD | lx | |||
| Output noise voltage (no input) | VN | 0.5 | mVrms | |||
| Output S/N | SN | 42 | 45 | dB | Optical input 1μW, signal frequency = 100kHz |
Note: The electrical and optical characteristics and outline dimensions are preliminary. Contact us for detailed documents such as the circuit block diagram.
Applications
Typical Uses
- Photodetector section of optoelectronic switches (LED driver built in)
- Photodetector section of various optical sensors (general-purpose analog photo IC)
For anything optical, talk to us first.
You do not need finalized specifications. We will work with you on the design of the entire photodetection system.